Toshiba Electronics Europe has launched the SSM6N58NU low-resistance dual N-channel MOSFET* for power management applications in mobile devices.
As the battery capacity of mobile devices increases, there is a need for devices that support increased charging currents and frequencies to keep charging times to a minimum.
The SSM6N58NU has a maximum DC drain current of 4A and a maximum pulsed drain current of 10A. The SSM6N58NU requires 2mm by 2mm of board space and has a body height of 0.75mm.
*A MOSFET, or metal-oxide-semiconductor field-effect transistor, controls the flow of electricity inside a hardware device to handle a particular activity.
No comments:
Post a Comment